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Power Transistors
2SC4953
Silicon NPN triple diffusion planar type
Unit: mm
For high breakdown voltage high-speed switching I Features
* High-speed switching * High collector to base voltage VCBO * Wide area of safe operation (ASO) * Satisfactory linearity of forward current transfer ratio hFE * Dielectric breakdown voltage of the package: > 5 kV
9.90.3
3.00.5
4.60.2 2.90.2
13.70.2 4.20.2 Solder Dip
15.00.5
3.20.1
1.40.2 1.60.2 0.80.1
2.60.1
0.550.15
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25C Ta = 25C Tj Tstg VEBO ICP IC IB PC Rating 500 500 400 7 6 3 1.2 30 2.0 150 -55 to +150 C C Unit V V V V A A A W
2.540.30 5.080.50 1 2 3
1 : Base 2 : Collector 3 : Emitter TO-220D Package
Junction temperature Storage temperature
I Electrical Characteristics TC = 25C
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Symbol ICBO IEBO VCEO hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 0.1 A VCE = 2 V, IC = 1.2 A IC = 1.5 A, IB = 0.3 A IC = 1.5 A, IB = 0.3 A VCE = 10 V, IC = 0.2 A, f = 1 MHz IC = 1.5 A, IB1 = 0.15 A, IB2 = - 0.3 A, VCC = 200 V 10 1.0 3.0 0.3 400 10 8 40 1.0 1.5 V V MHz s s s Min Typ Max 100 100 Unit A A V
1
2SC4953
IC VCE
5.0 TC=25C 4.5 IB=500mA 450mA 400mA 350mA 300mA 250mA 200mA 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 12 1 0 0 0.5 1.0 1.5 2.0 2.5 150mA 100mA 50mA 7 8 IC/IB=5 300
Power Transistors
IC VCE(sat) hFE IC
VCE=5V
Collector current IC (A)
Collector current IC (A)
4.0 3.5 3.0
6 5
TC=-25C 25C 125C
Forward current transfer ratio hFE
100 TC=125C
25C
4 3 2
30
-25C
10
3 0.003 0.01 0.03 0.1 0.3 1 3 10
Collector to emitter voltage VCE (V)
Collector to emitter saturation voltage VCE(sat) (V)
Collector current IC (A)
fT I C
100 VCE=10V f=1MHz TC=25C 100 30
ton, tstg, tf IC
Pulsed tw=1ms Duty cycle=1% IC/IB=10(2IB1=-IB2) VCC=200V TC=25C
Area of safe operation (ASO)
100 30 Non repetitive pulse Ta=25C Ta=85C ICP IC t=1ms 1s 10ms 1 0.3 0.1 0.03 0.01
Transition frequency fT (MHz)
Switching time ton,tstg,tf (s)
30
10 3 1 ton 0.3 0.1 0.03 tf
Collector current IC (A)
10 3
10
tstg
3
1
0.3
0.1 0.01
0.01 0.03 0.1 0.3 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
1
3
10
30
100
300
1000
Collector current IC (A)
Collector current IC (A)
Collector to emitter voltage VCE (V)
Area of safe operation, reverse bias ASO
4.0 3.5 IC/IB=5 Lcoil=100H TC=25C
Collector current IC (A)
3.0 2.5 2.0 1.5 1.0 0.5 0 0 100 200 300 400 500 600 700 800
Collector to emitter voltage VCE (V)
2
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2001 MAR

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